2D/3D/CAD
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BR25G128FVT-3
SPI BUS EEPROM
BR25G128FVT-3
BR25G128FVT-3
SPI BUS EEPROM
BR25G128FVT-3是128kbit SPI BUS接口的串行EEPROM。
主要规格
特性：
Series
BR25G-3
Density [bit]
128K
Bit Format [Word x Bit]
16K x 8
Vcc(Min.)[V]
1.6
Vcc(Max.)[V]
5.5
Circuit Current (Max.)[mA]
8
Standby Current (Max.)[μA]
2
Write Cycle (Max.)[ms]
5
Input Frequency (Max.)[Hz]
20M
Endurance (Max.)[Cycle]
106
Data Retention (Max.)[Year]
100
I/F
SPI BUS
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
85
Package Size [mm]
3x6.4 (t=1.2)
特点：
· High Speed Clock Action up to 20MHz (Max)· Wait Function by HOLDB Terminal
· Part or Whole of Memory Arrays Settable as Read only Memory Area by Program
· 1.6V to 5.5V Single Power Source Operation Most Suitable for Battery Use.
· Up to 64 Bytes in Page Write Mode.
· For SPI Bus Interface (CPOL, CPHA) = (0, 0), (1, 1)
· Self-timed Programming Cycle
· Low Current Consumption
·At Write Action (5V) : 0.5mA (Typ)
·At Read Action (5V) : 2.0mA (Typ)
·At Standby Action (5V) : 0.1µA (Typ)
· Address Auto Increment Function at Read Action
· Prevention of Write Mistake
·Write Prohibition at Power On
·Write Prohibition by Command Code (WRDI)
·Write Prohibition by WPB Pin
·Write Prohibition Block Setting by Status Registers (BP1, BP0)
·Prevention of Write Mistake at Low Voltage
· More than 100 years Data Retention.
· More than 1 Million Write Cycles.
· Bit Format 16K×8
· Initial Delivery Data
·Memory Array: FFh
·Status Register: WPEN, BP1, BP0 : 0
