SP8K41HZG
80V 双 Nch+Nch 功率MOSFET

本产品是符合AEC-Q101标准的车载级MOSFET。在SOP8封装中内置2个Nch 80V MOSFET。内置ESD保护二极管。适合开关用途。

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主要规格

 
型号 | SP8K41HZGTB
Status | 推荐品
封装 | SOP8
包装数量 | 2500
最小独立包装数量 | 2500
包装形态 | Taping
RoHS | Yes

特性：

Grade

Automotive

Common Standard

AEC-Q101 (Automotive Grade)

Package Code

SOP8

Package Size[mm]

5.0x6.0 (t=1.75)

Number of terminal

8

Polarity

Nch+Nch

Drain-Source Voltage VDSS[V]

80

Drain Current ID[A]

3.4

RDS(on)[Ω] VGS=4V(Typ.)

0.12

RDS(on)[Ω] VGS=4.5V(Typ.)

0.11

RDS(on)[Ω] VGS=10V(Typ.)

0.09

RDS(on)[Ω] VGS=Drive (Typ.)

0.12

Total gate charge Qg[nC]

6.6

Power Dissipation (PD)[W]

2.0

Drive Voltage[V]

4.0

Mounting Style

Surface mount

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

特点：

  • Low on-resistance
  • Small Surface Mount Package (SOP8)
  • Pb-free lead plating ; RoHS compliant
  • Halogen Free
  • Sn100% plating
  • AEC-Q101 Qualified
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设计资源

 

技术记事

Schematic Design & Verification

  • Temperature derating method for Safe Operating Area (SOA)
  • 开关电路的功率损失计算
  • 开关波形的监测方法
  • 功率测量中探针校正的重要性 倾斜校正篇
  • 旁路电容器的阻抗特性

Thermal Design

  • Notes for Temperature Measurement Using Thermocouples
  • 热仿真用双热阻模型
  • What is a Thermal Model? (Transistor)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • 热阻RthJC 的测量方法和使用方法
  • 使用热电偶测量封装背面温度时的注意点

设计模型

Characteristics Data

  • SP8K41HZG ESD Data

封装和质量数据

Package Information

  • Package Dimensions
  • Taping Information
  • Explanation for Marking
  • Condition of Soldering
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Environmental Data

  • About Flammability of Materials
  • About Non-use SVHC under Reach Regulation : Please contact us by filling in the form.
  • Compliance of the RoHS / ELV directive

Export Information

  • About Export Regulations