QS5U16
2.5V Drive Nch+SBD MOSFET

电界效果晶体管MOSFET。通过融合采用细微流程的低阻值MOSFET与肖特基二极管（SBD）形成了多种产品线来对应多样的市场需求。

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主要规格

 
型号 | QS5U16TR
Status | 可购买
封装 | TSMT5
包装数量 | 3000
最小独立包装数量 | 3000
包装形态 | Taping
RoHS | Yes

特性：

Grade

Standard

Package Code

SOT-25T

Package Size[mm]

2.9x2.8 (t=1.0)

Number of terminal

5

Polarity

Nch+Schottky

Drain-Source Voltage VDSS[V]

30

Drain Current ID[A]

2.0

RDS(on)[Ω] VGS=2.5V(Typ.)

0.11

RDS(on)[Ω] VGS=4V(Typ.)

0.076

RDS(on)[Ω] VGS=4.5V(Typ.)

0.071

RDS(on)[Ω] VGS=Drive (Typ.)

0.11

Total gate charge Qg[nC]

2.8

Power Dissipation (PD)[W]

0.9

Drive Voltage[V]

2.5

Reverse voltage VR (Diode) [V]

20.0

Forward Current IF (Diode) [A]

0.5

Forward Current Surge Peak IFSM (Diode) [A]

2.0

Mounting Style

Surface mount

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

特点：

・实现以2.9×2.8mm安装面积的高功率小空间的MOSFET
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设计资源

 

技术记事

Schematic Design & Verification

  • Temperature derating method for Safe Operating Area (SOA)
  • 开关电路的功率损失计算
  • 开关波形的监测方法
  • 功率测量中探针校正的重要性 倾斜校正篇
  • 旁路电容器的阻抗特性

Thermal Design

  • Notes for Temperature Measurement Using Thermocouples
  • 热仿真用双热阻模型
  • What is a Thermal Model? (Transistor)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • 热阻RthJC 的测量方法和使用方法
  • 使用热电偶测量封装背面温度时的注意点

设计模型

Models

  • QS5U16 SPICE Model
  • QS5U16 Thermal Model (lib)

Characteristics Data

  • ESD Data

封装和质量数据

Package Information

  • Package Dimensions
  • Inner Structure
  • Taping Information
  • Explanation for Marking
  • Condition of Soldering
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Manufacturing Data

  • Reliability Test Result

Environmental Data

  • Constitution Materials List - Please contact us by filling in the form.
  • About Flammability of Materials
  • About Non-use SVHC under Reach Regulation : Please contact us by filling in the form.
  • Compliance of the RoHS / ELV directive

Export Information

  • About Export Regulations