Models
- QS5U27 SPICE Model
- QS5U27 Thermal Model (lib)
- How to Create Symbols for PSpice Models
Characteristics Data
- ESD Data
QS5U27
QS5U27
2.5V Drive Pch+SBD MOSFET
电界效果晶体管MOSFET。通过融合采用细微流程的低阻值MOSFET与肖特基二极管（SBD）形成了多种产品线来对应多样的市场需求。
主要规格
特性：
Grade
Standard
Package Code
SOT-25T
Package Size[mm]
2.9x2.8 (t=1.0)
Number of terminal
5
Polarity
Pch+Schottky
Drain-Source Voltage VDSS[V]
-20
Drain Current ID[A]
-1.5
RDS(on)[Ω] VGS=2.5V(Typ.)
0.26
RDS(on)[Ω] VGS=4V(Typ.)
0.18
RDS(on)[Ω] VGS=4.5V(Typ.)
0.16
RDS(on)[Ω] VGS=Drive (Typ.)
0.26
Total gate charge Qg[nC]
4.2
Power Dissipation (PD)[W]
0.9
Drive Voltage[V]
-2.5
Reverse voltage VR (Diode) [V]
20.0
Forward Current IF (Diode) [A]
1.0
Forward Current Surge Peak IFSM (Diode) [A]
3.0
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
特点：
・实现以2.9×2.8mm安装面积的高功率小空间的MOSFET设计资源
技术记事
Schematic Design & Verification
- Temperature derating method for Safe Operating Area (SOA)
- 开关电路的功率损失计算
- 开关波形的监测方法
- 功率测量中探针校正的重要性 倾斜校正篇
- 旁路电容器的阻抗特性
Thermal Design
- 使用瞬态热阻抗计算结温的方法
- Notes for Temperature Measurement Using Thermocouples
- 热仿真用双热阻模型
- What is a Thermal Model? (Transistor)
- Notes for Temperature Measurement Using Forward Voltage of PN Junction
- 热阻RthJC 的测量方法和使用方法
- 使用热电偶测量封装背面温度时的注意点
设计模型
Models
- QS5U27 SPICE Model
- QS5U27 Thermal Model (lib)
- How to Create Symbols for PSpice Models
Characteristics Data
- ESD Data
封装和质量数据
Package Information
- Package Dimensions
- Inner Structure
- Taping Information
- Explanation for Marking
- Condition of Soldering
- Moisture Sensitivity Level
- Anti-Whisker formation
Manufacturing Data
- Reliability Test Result
Environmental Data
- Constitution Materials List - Please contact us by filling in the form.
- About Flammability of Materials
- About Non-use SVHC under Reach Regulation : Please contact us by filling in the form.
- Compliance of the RoHS / ELV directive
Export Information
- About Export Regulations