RJ1N04BBH
N沟道 80V 100A, TO-263AB, 功率MOSFET
RJ1N04BBH
N沟道 80V 100A, TO-263AB, 功率MOSFET
RJ1N04BBH是一款功率MOSFET，具有低导通电阻和高功率封装，适用于开关、电机驱动和DC/DC转换器。
主要规格
特性：
Package Code
TO-263AB
Number of terminal
3
Polarity
N
Drain-Source Voltage VDSS[V]
80
Drain Current ID[A]
100
RDS(on)[Ω] VGS=6V(Typ)
0.0053
RDS(on)[Ω] VGS=10V(Typ)
0.0044
RDS(on)[Ω] VGS=Drive (Typ)
0.0053
Total gate charge Qg[nC]
28
Power Dissipation (PD)[W]
89
Drive Voltage[V]
6
trr (Typ.)[ns]
53
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
15.1×10.11 (t=4.77)
特点：
- 低导通电阻
- 高功率模塑封装 (TO263AB)
- 无铅电镀;符合RoHS
- 无卤
- Rg和UIS测试
