BM60213FV-C
1200V耐压 高边/低边驱动器

BM60213FV-C是可驱动使用阴极负载方式的Nch-MOSFET及IGBT的1200V高耐压高边/低边驱动器。内置低电压时误动作防止功能(UVLO)。

主要规格

 
型号 | BM60213FV-CE2
Status | 推荐品
封装 | SSOP-B20W
包装数量 | 2000
最小独立包装数量 | 2000
包装形态 | Taping
RoHS | Yes

特性:

Channel

2

High-side floating supply voltage [V]

1200

Turn-on/off time (Typ.) [ns]

75

Vcc(Min.)[V]

10

Vcc(Max.)[V]

24

Operating Temperature (Min.)[°C]

-40

Operating Temperature (Max.)[°C]

125

Package Size [mm]

6.5x8.1 (t=2.01)

Common Standard

AEC-Q100 (Automotive Grade)

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特点:

  • AEC-Q100 Qualified(Grade 1)
  • High-Side Floating Supply Voltage 1200 V
  • Under Voltage Lockout Function
  • 3.3 V and 5.0 V Input Logic Compatible

Evaluation
Board

 
    • Evaluation Board
    • BM60213FV-EVK001
    • The BM60213FV-EVK001 board can be driving IGBT Power Devices for High-side and Low-side on Half-Bridge application. The BM60213FV-C has Power Supply protections which are the Under-Voltage Lockout (UVLO) function at VCCA and VCCB. The BM60213FV-EVK001 allows designers to evaluate Rohm’s Gate Driver family for various applications.

  • User's Guide Buy