S4001
N-channel SiC（碳化硅）功率MOSFET Bare die
S4001
S4001
N-channel SiC（碳化硅）功率MOSFET Bare die
S4001 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage withstand capability, low ON-state resistance, and fast switching speed.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
Data Sheet
* 本产品是标准级的产品。
本产品不建议使用于车载设备。
本产品不建议使用于车载设备。
主要规格
特性：
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
30
Generation
3rd Gen
Drain Current[A]
70
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
特点：
· Low ON resistance· Fast switching speed
· Fast revese recovery
· Easy to parallel
· Simple to drive
