SCT4062KW7 (新产品)
1200V, 24A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

SCT4062KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Data Sheet 购买 *
* 本产品是标准级的产品。
本产品不建议使用于车载设备。

主要规格

 
型号 | SCT4062KW7TL
Status | 推荐品
封装 | TO-263-7L
包装数量 | 1000
最小独立包装数量 | 1000
包装形态 | Taping
RoHS | Yes

特性:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

62

Generation

4th Gen (Trench)

Drain Current[A]

24

Total Power Dissipation[W]

93

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

175

Package Size [mm]

10.2x15.4 (t=4.7)

Find Similar

特点:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant