SCT2H12NY
Nch SiC（碳化硅）功率MOSFET
SCT2H12NY
SCT2H12NY
Nch SiC（碳化硅）功率MOSFET
SCT2H12NY是1700V 4A的Nch SiC功率MOSFET。
主要规格
特性：
Drain-source Voltage[V]
1700
Drain-source On-state Resistance(Typ.)[mΩ]
1150
Generation
2nd Gen (Planar)
Drain Current[A]
4
Total Power Dissipation[W]
44
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
15.95x18.9 (t=5.2)
特点：
- Low on-resistance
- Fast switching speed
- Long creepage distance with no center lead
- Simple to drive
- Pb-free lead plating; RoHS compliant
