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SCT3160KLHR

N-channel SiC（碳化硅）功率MOSFET
Data Sheet
SCT3160KLHR

主要规格

 
型号 | SCT3160KLHRC11
封装 | TO-247N
包装数量 | 450
最小独立包装数量 | 30
包装形态 | Tube
RoHS | Yes

特性：

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

160

Generation

3rd Gen (Trench)

Drain Current[A]

17

Total Power Dissipation[W]

103

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x21 (t=5.2)

Common Standard

AEC-Q101 (Automotive Grade)

Find Similar

特点：

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant
  • Qualified to AEC-Q101
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