本品是使用ROHM生产的SiC-DMOSFET和SiC肖特基势垒二极管的斩波结构的SiC MOSFET模块。
Drain-source Voltage[V]
1200
Drain Current[A]
80
Total Power Dissipation[W]
600
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Package Size [mm]
122x45.6 (t=17.5)
BSM series (1200V, C type)
Core Driver : 2ASC-12A1HP
Adapter Board : EDCA2
This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
BSM series (1200V, C type)
For BSM series (1200V, C / E / G type)
