新设计非推荐 SCS212AM
SiC(碳化硅)肖特基势垒二极管

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主要规格

 
型号 | SCS212AMC
封装 | TO-220FM2L
包装数量 | 1000
最小独立包装数量 | 50
包装形态 | Tube
RoHS | Yes

特性:

Grade

Standard

Reverse Voltage[V]

650

Continuous Forward Current[A]

12

Generation

2nd Gen

Total Power Dissipation[W]

37

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

10.16x15.87 (t=4.9)

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特点:

・反向恢复时间短
・能够高速开关
・特性的温度影响小

Reference Design / Application Evaluation Kit

 
    • Reference Design - REFPDT007
    • 5kW High-Efficiency Fan-less Inverter
    • We employ trans-linked interleaved circuits as inverter circuits that utilize the high frequency switching performance of silicon carbide (SiC) MOSFET, achieving a power conversion efficiency of 99% or more at 5kW.Since this circuit topology allows a reduction in the inductance of the smoothing reactor, the high efficiency is achieved by reducing the number of windings of the reactor to dramatically reduce the copper loss. These novel inverter circuits have been developed jointly with Power Assist Technology Ltd. (https://www.power-assist-tech.co.jp/)


      This reference design consists of three boards. Each is shown below.

      • REFPDT007-EVK-001A Power Stage
      • REFPDT007-EVK-001B Controller Board
      • REFPDT007-EVK-001C Aux Power Supply

      Since the interleaved type using SiC MOSFET (SCT3017AL, SCT3030AL) has an efficiency of 99.0% (total loss 51 W),heat generation is reduced, and the circuit can be cooled with downsized heat radiation fins without using a cooling fan.Furthermore, since the apparent switching frequency is doubled for the interleaved type, the smoothing filter is downsized by a factor of 2 in its size and weight.

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