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10V驱动型 Nch MOSFET_R6076ENZ1

场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”,为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容,可满足多样的市场需求。

* 本产品是标准级的产品。本产品不建议使用的车载设备。
型号 | R6076ENZ1C9
Status | 供应中
封装 | TO-247
包装数量 | 450
最小独立包装数量 | 450
包装形态 | Bulk
RoHS | Yes

特性:

Grade

Standard

Package Code

TO-247

Package Size[mm]

21.07x15.94(t=5.02)

Applications

Power Supply

Number of terminal

3

Polarity

Nch

Drain-Source Voltage VDSS[V]

600

Drain Current ID[A]

76.0

RDS(on)[Ω] VGS=10V (Typ.)

0.038

RDS(on)[Ω] VGS=Drive (Typ.)

0.038

Total gate charge Qg[nC]

260.0

Power Dissipation (PD)[W]

120.0

Drive Voltage[V]

10.0

Mounting Style

Leaded type

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

特点:

1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage(VGSS)guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating; RoHS compliant.