YQ8RSM10SD (新产品)
Trench MOS Structure, 100V, 8A, TO-277GE, Highly Efficient SBD
YQ8RSM10SD
YQ8RSM10SD (新产品)
Trench MOS Structure, 100V, 8A, TO-277GE, Highly Efficient SBD
The YQ8RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Data Sheet
* 本产品是标准级的产品。
本产品不建议使用于车载设备。
本产品不建议使用于车载设备。
主要规格
特性：
Configuration
Single
Package Code
TO-277A
Mounting Style
Surface mount
Number of terminal
3
VRM[V]
100
Reverse Voltage VR[V]
100
Average Rectified Forward Current IO[A]
8
IFSM[A]
140
Forward Voltage VF(Max.)[V]
0.67
IF @ Forward Voltage [A]
8
Reverse Current IR(Max.)[mA]
0.06
VR @ Reverse Current[V]
100
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
4.6x6.5 (t=1.2)
特点：
- High reliability
- Power mold type
- Low VF and low IR
- Low capacitance
