ROHM Product Detail

RB160VAM-60
60V, 1A, 肖特基势垒二极管

RB160VAM-60是一般整流用的肖特基势垒二极管。

Data Sheet 购买 *
* 本产品是标准级的产品。
本产品不建议使用于车载设备。

主要规格

 
型号 | RB160VAM-60TR
Status | 推荐品
封装 | TUMD2M
包装形态 | Taping
包装数量 | 3000
最小独立包装数量 | 3000
RoHS | Yes

特性:

Configuration

Single

Package Code

SOD-323HE

Package(JEITA)

SC-108B

Mounting Style

Surface mount

Number of terminal

2

VRM[V]

60

Reverse Voltage VR[V]

60

Average Rectified Forward Current IO[A]

1

IFSM[A]

5

Forward Voltage VF(Max.)[V]

0.43

IF @ Forward Voltage [A]

0.1

Reverse Current IR(Max.)[mA]

0.04

VR @ Reverse Current[V]

60

Tj[℃]

150

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Package Size [mm]

2.5x1.4 (t=0.8)

Find Similar

特点:

  • Small power mold type (TUMD2M)
  • High reliability
  • Low VF

参考设计 / 应用评估套件

 
    • Reference Design - REF68006
    • SCZ4009KTAHRC23-EVK-A09 Three Phase Inverter Evaluation Board
    • This SCZ4009KTAHRC23-EVK-A09 provides detailed specifications for a 3-phase inverter that utilizes Silicon Carbide (SiC) MOSFETs.

      The SCZ4009KTAHRC23-EVK-A09 is a reference design platform for evaluating a three-phase inverter system utilizing ROHM's 4th Generation SiC MOSFETs in a DOT-247 package. This evaluation kit includes a power board, gate drive board, and sensing board, offering a comprehensive solution for high-efficiency power conversion applications upto 10kVA. This reference design includes comprehensive design resources such as schematics, bill of materials (BOM), and PCB layout files. It features a reference board built with DOT-247 package SiC MOSFETs, optimized for high-performance three-phase inverter applications.

      We encourage to explore the advanced control capabilities of this EVK and consider its integration into your future power electronics development projects.

      The product page for SCZ4009KTAHR will be prepared and provided separately.

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