GNP2130TEC-Z
EcoGaN™, 650V 14.5A DFN8080CK, E-mode 氮化镓(GaN) HEMT
GNP2130TEC-Z
EcoGaN™, 650V 14.5A DFN8080CK, E-mode 氮化镓(GaN) HEMT
GNP2130TEC-Z 是一款 650V GaN HEMT，实现了业界更佳的 FOM (Ron*Ciss、Ron*Coss)。它是 EcoGaN™ 系列产品，通过充分利用低导通电阻和高速开关特性，有助于提高功率转换效率和缩小尺寸。内置 ESD 保护功能，实现高可靠性设计。此外，高度通用的封装提供优良的散热性能并便于安装。 正在寻找能激发 GaN HEMT 性能的栅极驱动器？→ GaN用栅极驱动器
主要规格
特性：
VDS [V]
650
IDS [A]
14.5
VGS Rating [V]
6.5
RDS(on) [mΩ]
130
Qg [nC]
2.8
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Dimensions [mm]
8.0x8.0 (t=1.0)
特点：
- 650V E-mode GaN HEMT
- 130mΩ 电阻
- 2.8nC 栅极电荷
参考设计 / 应用评估套件
-
- Evaluation Board - GNP2130TEC-1-EVK-001
In order to take advantage of good switching performance and heat dissipation for GaN power devices, it is necessary to evaluate them under various drive conditions, but these evaluations are not easy. The EVK has been released to evaluate the switching performance.
