GNP2130TEC-Z
EcoGaN™, 650V 14.5A DFN8080CK, E-mode 氮化镓(GaN) HEMT
新设计非推荐
GNP2130TEC-Z
EcoGaN™, 650V 14.5A DFN8080CK, E-mode 氮化镓(GaN) HEMT
为支持现有客户而生产的产品。不对新设计出售此产品。
主要规格
特性：
VDS [V]
650
IDS [A]
14.5
VGS Rating [V]
6.5
RDS(on) [mΩ]
130
Qg [nC]
2.8
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Dimensions [mm]
8.0x8.0 (t=1.0)
特点：
- 650V E-mode GaN HEMT
- 130mΩ 电阻
- 2.8nC 栅极电荷
参考设计 / 应用评估套件
-
- Evaluation Board - GNP2130TEC-1-EVK-001
In order to take advantage of good switching performance and heat dissipation for GaN power devices, it is necessary to evaluate them under various drive conditions, but these evaluations are not easy. The EVK has been released to evaluate the switching performance.
