GNP2130TEC-Z (新产品)
EcoGaN™, 650V 14.5A DFN8080CK, E-mode Gallium-Nitride(GaN) HEMT
GNP2130TEC-Z (新产品)
EcoGaN™, 650V 14.5A DFN8080CK, E-mode Gallium-Nitride(GaN) HEMT
GNP2130TEC-Z is an 650V GaN HEMT which has achieved the industry's highest class FOM (Ron*Ciss、Ron*Coss). It is a product of the EcoGaN™ series that contributes to power conversion efficiency and size reduction by making the best use of low ON resistance and high-speed switching. ESD protection function is built in for high-reliability design. In addition, the highly versatile packages provide excellent heat dissipation and facilitates mounting. Looking for the Gate Driver inspiring GaN HEMT performance? → Gate Drivers for GaN
主要规格
特性：
VDS [V]
650
IDS [A]
14.5
VGS Rating [V]
6.5
RDS(on) [mΩ]
130
Qg [nC]
2.8
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Dimensions [mm]
8.0x8.0 (t=1.0)
特点：
- 650V E-mode GaN HEMT
- 130mΩ Resistance
- 2.8nC Gate Charge
参考设计 / 应用评估套件
-
- Evaluation Board - GNP2130TEC-1-EVK-001
In order to take advantage of good switching performance and heat dissipation for GaN power devices, it is necessary to evaluate them under various drive conditions, but these evaluations are not easy. The EVK has been released to evaluate the switching performance.
