TT8K2
2.5V驱动双N沟道MOSFET主要规格
特性:
Package Code
TSST8
Number of terminal
8
Polarity
N+N
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
2.5
RDS(on)[Ω] VGS=2.5V(Typ)
0.095
RDS(on)[Ω] VGS=4V(Typ)
0.07
RDS(on)[Ω] VGS=4.5V(Typ)
0.065
RDS(on)[Ω] VGS=Drive (Typ)
0.095
Total gate charge Qg[nC]
3.2
Power Dissipation (PD)[W]
1.25
Drive Voltage[V]
2.5
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
1.9x3.0 (t=0.85)
特点:
· 2.5V驱动型· 双N沟道中功率MOSFET
· 更快开关速度
· 小型表面贴装封装
· 无铅/符合RoHS标准
