RJ1L12DGN
Nch 60V 120A 功率MOSFET

RJ1L12DGN是一款表面贴装封装、低导通电阻的开关用功率MOSFET。

Data Sheet 购买
* 本产品是标准级的产品。
本产品不建议使用于车载设备。
Data Sheet 购买

主要规格

 
型号 | RJ1L12DGNTLL
Status | 推荐品
封装 | TO-263AB (LPTL)
包装数量 | 1000
最小独立包装数量 | 1000
包装形态 | Taping
RoHS | Yes

特性:

Grade

Standard

Package Code

TO-263AB

Package Size[mm]

10.1x15.1 (t=4.7)

Number of terminal

3

Polarity

Nch

Drain-Source Voltage VDSS[V]

60

Drain Current ID[A]

120.0

RDS(on)[Ω] VGS=4.5V(Typ.)

0.0051

RDS(on)[Ω] VGS=10V(Typ.)

0.0039

RDS(on)[Ω] VGS=Drive (Typ.)

0.0051

Total gate charge Qg[nC]

47.0

Power Dissipation (PD)[W]

125.0

Drive Voltage[V]

4.5

Mounting Style

Surface mount

Bare Die Part Number

Available: K4823

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

特点:

  • Low on - resistance
  • High power small mold package
  • Pb-free lead plating ; RoHS compliant
  • UIS tested
  • Halogen free

设计资源

 

技术记事

Schematic Design & Verification

  • Temperature derating method for Safe Operating Area (SOA)
  • 开关电路的功率损失计算
  • 开关波形的监测方法
  • 功率测量中探针校正的重要性 倾斜校正篇
  • 旁路电容器的阻抗特性

Thermal Design

  • Notes for Temperature Measurement Using Thermocouples
  • 热仿真用双热阻模型
  • What is a Thermal Model? (Transistor)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • 热阻RthJC 的测量方法和使用方法
  • 使用热电偶测量封装背面温度时的注意点

设计模型

Models

  • RJ1L12DGN SPICE Model

Characteristics Data

  • ESD Data

封装和质量数据

Package Information

  • Package Dimensions
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Environmental Data

  • About Flammability of Materials
  • About Non-use SVHC under Reach Regulation : Please contact us by filling in the form.
  • Compliance of the RoHS / ELV directive

Export Information

  • About Export Regulations