RJ1R10BBH
N沟道150V 105A, TO-263AB, 功率MOSFET
RJ1R10BBH
N沟道150V 105A, TO-263AB, 功率MOSFET
RJ1R10BBH是低导通电阻、高功率小型模塑封装MOSFET，适用于开关。
主要规格
特性：
Package Code
TO-263AB
Applications
Switching
Number of terminal
3
Polarity
N
Drain-Source Voltage VDSS[V]
150
Drain Current ID[A]
105
RDS(on)[Ω] VGS=6V(Typ)
0.0067
RDS(on)[Ω] VGS=10V(Typ)
0.0063
RDS(on)[Ω] VGS=Drive (Typ)
0.0067
Total gate charge Qg[nC]
86
Power Dissipation (PD)[W]
181
Drive Voltage[V]
6
trr (Typ.)[ns]
170
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
15.1×10.11 (t=4.77)
特点：
- 低导通电阻
- 高功率小型模塑封装 (TO263AB)
- Pb无铅电镀; 符合RoHS标准
- Rg和UIS测试
- 无卤素
