RD3N06BAT
P沟道 -80V -60A, TO-252 (DPAK), 功率MOSFET
RD3N06BAT
P沟道 -80V -60A, TO-252 (DPAK), 功率MOSFET
RD3N06BAT是一款低导通电阻和高功率封装的功率MOSFET，适用于开关和电机驱动应用。
主要规格
特性：
Package Code
TO-252 (DPAK)
JEITA Package
SC-63
Applications
Switching
Number of terminal
3
Polarity
Pch
Drain-Source Voltage VDSS[V]
-80
Drain Current ID[A]
-60
RDS(on)[Ω] VGS=6V(Typ)
0.023
RDS(on)[Ω] VGS=10V(Typ)
0.0195
RDS(on)[Ω] VGS=Drive (Typ)
0.023
Total gate charge Qg[nC]
67
Power Dissipation (PD)[W]
101
Drive Voltage[V]
-6
trr (Typ.)[ns]
40
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
9.9x6.6 (t=2.4)
特点：
- 低导通电阻
- 高功率封装(TO-252)
- 无铅电镀;符合RoHS标准
- 无卤
- Rg和UIS测试
