RF4C100BC
P沟道 -20V -10A 中功率MOSFET主要规格
特性:
Package Code
DFN2020-8S
Applications
Switching
Number of terminal
8
Polarity
P
Drain-Source Voltage VDSS[V]
-20
Drain Current ID[A]
-10
RDS(on)[Ω] VGS=1.8V(Typ)
0.0235
RDS(on)[Ω] VGS=2.5V(Typ)
0.0154
RDS(on)[Ω] VGS=4.5V(Typ)
0.012
RDS(on)[Ω] VGS=Drive (Typ)
0.0235
Total gate charge Qg[nC]
23.5
Power Dissipation (PD)[W]
2
Drive Voltage[V]
-1.8
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
2.0x2.0 (t=0.65)
特点:
• 低导通电阻。• 高功率小尺寸成型封装 (HUML2020L8)
• 镀铅层无铅 ; 符合RoHS标准
• 无卤素
