RQ3N060AT
Pch -80V -18A, HSMT8, 功率MOSFET
RQ3N060AT
Pch -80V -18A, HSMT8, 功率MOSFET
RQ3N060AT是一款低导通电阻、大功率封装的功率MOSFET，适用于开关和电机驱动应用。
主要规格
特性：
Package Code
HSMT8
Applications
Switching
Number of terminal
8
Polarity
Pch
Drain-Source Voltage VDSS[V]
-80
Drain Current ID[A]
-18
RDS(on)[Ω] VGS=6V(Typ)
0.046
RDS(on)[Ω] VGS=10V(Typ)
0.04
RDS(on)[Ω] VGS=Drive (Typ)
0.046
Total gate charge Qg[nC]
32
Power Dissipation (PD)[W]
20
Drive Voltage[V]
-6
trr (Typ.)[ns]
35
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
3.3x3.3 (t=0.9)
特点：
- 低导通电阻
- 大功率小模封装 (HSMT8)
- 无铅电镀；符合RoHS指令
- Rg和UIS测试
- 无卤素
