RZY200P01
1.5V驱动P沟道MOSFET
主要规格
特性：
Applications
Power Supply
Number of terminal
3
Polarity
P
Drain-Source Voltage VDSS[V]
-12
Drain Current ID[A]
-20
RDS(on)[Ω] VGS=1.5V(Typ)
0.02
RDS(on)[Ω] VGS=2.5V(Typ)
0.011
RDS(on)[Ω] VGS=4.5V(Typ)
0.0085
RDS(on)[Ω] VGS=Drive (Typ)
0.02
Total gate charge Qg[nC]
70
Power Dissipation (PD)[W]
20
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
8.0x6.6 (t=2.0)
特点：
· 低电压(1.5V)驱动型· P沟道小信号MOSFET
· 小型表面贴装封装
· 无铅/符合RoHS标准
