SCT4013DE
1200V, 105A, 3引脚THD, 沟槽结构, SiC MOSFET
SCT4013DE
SCT4013DE
1200V, 105A, 3引脚THD, 沟槽结构, SiC MOSFET
SCT4013DE是有助于应用产品实现小型化和更低功耗的SiC MOSFET。
ROHM的第4代SiC MOSFET
SCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比,该系列产品的导通电阻降低了约40%,开关损耗降低了约50%。另外,该产品还支持更容易处理的15V栅-源电压,使应用产品的设计更容易。
主要规格
特性:
Drain-source Voltage[V]
750
Drain-source On-state Resistance(Typ.)[mΩ]
13
Generation
4th Gen (Trench)
Drain Current[A]
105
Total Power Dissipation[W]
312
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
特点:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant