制造中止
SCH2080KE
SiC（碳化硅）MOSFET
SCH2080KE
主要规格
特性：
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
80
Generation
2nd Gen (Planar)
Drain Current[A]
40
Total Power Dissipation[W]
262
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
15.9x20.95 (t=5.21)
特点：
・High-speed switching・Low ON resistance
・Low body diode Qrr and trr
・Ensured reliability of body diode conduction
・SiC SBD co-packed
