N-channel SiC(碳化硅)功率MOSFET_SCT3105KL
沟槽栅极结构的SiC-MOSFET。平面型SiC-MOSFET相比,同一芯片尺寸的导通电阻可降低50%,这将大幅降低太阳能发电用功率调节器和工业设备用电源、工业用逆变器等所有相关设备的功率损耗。
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特性:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
105.0
Drain Current[A]
24.0
Total Power Dissipation[W]
134
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
特点:
・ Low on-resistance・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant