N-channel Silicon Carbide Power MOSFET_SCT3105KL_罗姆半导体集团(ROHM Semiconductor)
Rohm Productdetail
N-channel Silicon Carbide Power MOSFET_SCT3105KL (新产品)
SCT3105KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Suitable for solar inverters, DC/DC converters, switch mode power supplies, induction heating, motor drives.
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特性：
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
105.0
Drain Current[A]
24.0
Total Power Dissipation[W]
134
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
特点：
・ Low on-resistance・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant