1200V Nch 4引脚封装 SiC（碳化硅）MOSFET_SCT3105KR
SCT3105KR是非常适用于要求高效率的服务器用电源、太阳能逆变器及电动汽车充电站等的沟槽栅结构SiC MOSFET。采用电源源极引脚和驱动器源极引脚分离的4引脚封装，能够充分地发挥出高速开关性能。尤其是可以显著改善导通损耗。与以往的3引脚封装（TO-247N）相比，导通损耗和关断损耗合起来预计可降低约35％的损耗。
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特性：
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
105.0
Drain Current[A]
24.0
Total Power Dissipation[W]
134
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
特点：
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating; RoHS compliant
- High efficiency 4pin package
- Evaluation board 'P02SCT3040KR-EVK-001'