SCT3105KR

1200V Nch 4引脚封装 SiC（碳化硅）MOSFET
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SCT3105KR

SCT3105KR
1200V Nch 4引脚封装 SiC（碳化硅）MOSFET

SCT3105KR是非常适用于要求高效率的服务器用电源、太阳能逆变器及电动汽车充电站等的沟槽栅结构SiC MOSFET。采用电源源极引脚和驱动器源极引脚分离的4引脚封装，能够充分地发挥出高速开关性能。尤其是可以显著改善导通损耗。与以往的3引脚封装（TO-247N）相比，导通损耗和关断损耗合起来预计可降低约35％的损耗。

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* 本产品是标准级的产品。
本产品不建议使用于车载设备。
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主要规格

 
型号 | SCT3105KRC15
Status | 推荐品
封装 | TO-247-4L
包装数量 | 450
最小独立包装数量 | 30
包装形态 | Tube
RoHS | Yes

特性：

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

105

Generation

3rd Gen (Trench)

Drain Current[A]

24

Total Power Dissipation[W]

134

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x23.45 (t=5.2)

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特点：

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant

Evaluation
Board

 
    • Evaluation Board
    • P02SCT3040KR-EVK-001

      • For evaluating ROHM’s SCT3040KR (1200V/40mΩ/TO-247-4L)
        Enables evaluation of other ROHM SiC MOSFETs by simply changing the circuit multiplier
      • In addition to the TO-247-4L package, there are through-holes for TO-247-3L that make it possible to perform comparative evaluations on the same board
      • Single power supply (+12V operation)
      • Supports double pulse testing up to 150A and switching up to 500kHz
      • Compatible with a variety of power supply topologies (Buck/Boost/Half Bridge)
      • Built-in isolated power supply for gate drive adjustable via variable resistor (+12V to +23V)
      • Jumper pins enable switching between negative bias/zero bias for gate drive
      • Includes overcurrent protection (DESAT, OCP) along with a function for preventing simultaneous ON of both upper and lower arms

  • User's Guide Buy
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