ROHM Product Detail

SCT4065DE (新产品)

750V, 25A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
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SCT4065DE
(新产品)

SCT4065DE (新产品)
750V, 25A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET

SCT4065DE is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Data Sheet 购买
* 本产品是标准级的产品。
本产品不建议使用于车载设备。
Data Sheet 购买

主要规格

 
型号 | SCT4065DEC11
Status | 推荐品
封装 | TO-247N
包装形态 | Tube
包装数量 | 450
最小独立包装数量 | 30
RoHS | Yes

特性：

Drain-source Voltage[V]

750

Drain-source On-state Resistance(Typ.)[mΩ]

65

Generation

4th Gen (Trench)

Drain Current[A]

25

Total Power Dissipation[W]

88

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

175

Package Size [mm]

21.0x16.0 (t=5.2)

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特点：

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant
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