ROHM Product Detail

新设计非推荐

BSM180D12P2C101

SiC（碳化硅）功率模块
Data Sheet
BSM180D12P2C101

新设计非推荐 BSM180D12P2C101
SiC（碳化硅）功率模块

为支持现有客户而生产的产品。不对新设计出售此产品。

Data Sheet
Data Sheet

主要规格

 
型号 | BSM180D12P2C101
封装 | C Type
包装形态 | Tray
包装数量 | 12
最小独立包装数量 | 12
RoHS | Yes

特性：

Drain-source Voltage[V]

1200

Drain Current[A]

204

Total Power Dissipation[W]

1360

Junction Temperature (Max.) [℃]

175

Storage Temperature (Min.) [℃]

-40

Storage Temperature (Max.) [℃]

125

Package

Half-Bridge

Package Size [mm]

122.0x45.6 (t=17.5)

特点：

・SiC MOSFET-only power module
・High-speed switching and low switching loss
・Ensured reliability of body diode conduction
・Low body diode Qrr and trr

参考设计 / 应用评估套件

 
    • Drive Board - BSMGD3C12D24-EVK001

    • This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User's Guide
    • Snubber Module - MGSM1D72J2-145MH26

    • Snubber Module for BSM series (1200V, C type)

    • Drive Board - TAMURA 2DU series

    • Drive Board for BSM series (1200V, C / E / G type)

    •
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