BSM180D12P3C007
SiC(碳化硅)功率模块

使用罗姆公司生产SiC-UMOSFET的半桥构成SiC MOSFET模块。

Data Sheet 购买 *
* 本产品是标准级的产品。
本产品不建议使用于车载设备。

主要规格

 
型号 | BSM180D12P3C007
Status | 推荐品
封装 | C
包装数量 | 12
最小独立包装数量 | 12
包装形态 | Corrugated Cardboard
RoHS | Yes

特性:

Drain-source Voltage[V]

1200

Drain Current[A]

180

Total Power Dissipation[W]

880

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Package Size [mm]

122x45.6 (t=17.5)

Find Similar

特点:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Evaluation
Board

 
    • Drive Board
    • AgileSwitch 2ASC-12A1HP / EDCA2
    • BSM series (1200V, C type)
      Core Driver : 2ASC-12A1HP
      Adapter Board : EDCA2

  • Purchase Inquiry
    • Drive Board
    • BSMGD3C12D24-EVK001
    • This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

  • User's Guide Purchase Inquiry
    • Drive Board
    • TAMURA 2DU series
    • For BSM series (1200V, C / E / G type)

  • Purchase Inquiry