BSM600D12P4G103
1200V, 567A, 内置半桥沟槽MOS的全SiC功率模块
BSM600D12P4G103
1200V, 567A, 内置半桥沟槽MOS的全SiC功率模块
BSM600D12P4G103是一款由SiC-DMOSFET组成的半桥功率模块。非常适用于电机驱动、逆变器、转换器、光伏发电、风力发电和IH设备等应用。
主要规格
特性：
Drain-source Voltage[V]
1200
Drain Current[A]
567
Total Power Dissipation[W]
1780
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Half-Bridge
Package Size [mm]
152.0x62.0 (t=18.0)
特点：
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
参考设计 / 应用评估套件
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- Drive Board - BSMGD3G12D24-EVK001
This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
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- Snubber Module - MGSM1D72J2-145MH16
Snubber Module for BSM series (1200V, E / G type)
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- Reference Design - REF69001
- Half-Bridge Drive for SiC Case Module
In power distribution applications including renewable energy, which handles large amounts of power, the use of SiC is accelerating in order to improve efficiency, miniaturize, and lighten the design. SiC, which has higher-speed and higher-efficiency characteristics compared to conventional IGBTs, presents challenges in design, such as gate drive and short-circuit protection, leading to increased design effort. The gate drive board for SiC case modules developed by TAMURA Corporation is matched in gate voltage, gate resistance, and short-circuit characteristics for 4th generation SiC modules, enabling users to begin evaluation easily and perform highly reliable testing. Furthermore, this board is suitable for mass production and can be directly integrated into mass production equipment, thus contributing to a reduction in design effort and cost reduction.
For details on the board and customization options, please contact below.
https://www.tamuracorp.com/global/products/gate-drivers/powermodule/detail/rohm.html
