SCS312AG
650V, 12A, THD, SiC（碳化硅）SBD
SCS312AG
SCS312AG
650V, 12A, THD, SiC（碳化硅）SBD
降低了开关损耗，实现了高速开关。
主要规格
特性：
Grade
Standard
Reverse Voltage[V]
650
Continuous Forward Current[A]
12
Generation
3rd Gen
Total Power Dissipation[W]
78
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.16x19.17 (t=4.44)
特点：
- 恢复时间更短
- 更低温度依赖性
- 可实现高速开关
- 高浪涌电流能力
