2SAR567F3
(新产品)

2SAR567F3 (新产品)
小型化、高散热性封装，PNP -2.5A -120V 中功率晶体管

2SAR567F3是低VCE(sat)的中功率晶体管，适合低频放大用途。采用热导率、导电率优异的无引线小型表面安装封装HUML2020L3(DFN2020-3S)。

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  • 封装和质量数据  
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主要规格

 
型号 | 2SAR567F3TR
Status | 推荐品
封装 | HUML2020L3
包装数量 | 3000
最小独立包装数量 | 3000
包装形态 | Taping
RoHS | Yes

特性：

Grade

Standard

Package Code

DFN2020-3S

Package Size[mm]

2.0x2.0 (t=0.6)

Number of terminal

3

Polarity

PNP

Collector Power dissipation PC[W]

1

Collector-Emitter voltage VCEO1[V]

-120.0

Collector current Io(Ic) [A]

-2.5

hFE

120 to 390

hFE (Min.)

120

hFE (Max.)

390

Mounting Style

Surface mount

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

特点：

  • Suitable for Middle Power Driver.
  • Low VCE(sat) VCE(sat)=-200mV (Max.) . (IC/IB=-800mA/-80mA)
  • High collector current. IC=-2.5A(max), ICP=-5A(max)
  • Leadless small SMD package (HUML2020L3) Excellent thermal and electrical conductivity.
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设计资源

 

技术记事

Schematic Design & Verification

  • Temperature derating method for Safe Operating Area (SOA)
  • 开关电路的功率损失计算
  • 开关波形的监测方法
  • 功率测量中探针校正的重要性 倾斜校正篇
  • 旁路电容器的阻抗特性

Thermal Design

  • Notes for Temperature Measurement Using Thermocouples
  • 热仿真用双热阻模型
  • What is a Thermal Model? (Transistor)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • 热阻RthJC 的测量方法和使用方法
  • 使用热电偶测量封装背面温度时的注意点

设计模型

Models

  • 2SAR567F3 SPICE Model

Characteristics Data

  • 2SAR567F3 Thermal Resistance

封装和质量数据

Package Information

  • Package Dimensions
  • Taping Information
  • Explanation for Marking
  • Moisture Sensitivity Level
  • Anti-Whisker formation
  • Condition of Soldering

Environmental Data

  • About Flammability of Materials
  • About Non-use SVHC under Reach Regulation : Please contact us by filling in the form.
  • Compliance of the RoHS / ELV directive

Export Information

  • About Export Regulations