SH2104WN
650V 20A, IGBT模块用FRD裸芯片
SH2104WN
SH2104WN
650V 20A, IGBT模块用FRD裸芯片
应用:通用逆变器、UPS、功率调节器、Welding
关于裸芯片的规格和销售事宜,请咨询ROHM销售部门,目前尚未开始网售。
主要规格
特性:
Series
FRD: Fast recovery diode
VRM [V]
650
IF(Nominal) [A]
20
VF(Typ.) [V]
1.45
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
175
特点:
- Light Punch Through Type
- Low Forward Voltage
- Very Fast & Soft Recovery
- Low Recovery Loss