RD3L220SN
Nch 60V 22A 功率MOSFET

RD3L220SN是低导通电阻功率MOSFET。适合开关应用。

Data Sheet 购买 *
* 本产品是标准级的产品。
本产品不建议使用于车载设备。

主要规格

 
型号 | RD3L220SNTL1
Status | 推荐品
封装 | TO-252
包装数量 | 2500
最小独立包装数量 | 2500
包装形态 | Taping
RoHS | Yes

特性:

Grade

Standard

Package Code

TO-252 (DPAK)

JEITA Package

SC-63

Package Size[mm]

6.6x10.0 (t=2.3)

Number of terminal

3

Polarity

Nch

Drain-Source Voltage VDSS[V]

60

Drain Current ID[A]

22.0

RDS(on)[Ω] VGS=4V(Typ.)

0.023

RDS(on)[Ω] VGS=4.5V(Typ.)

0.021

RDS(on)[Ω] VGS=10V(Typ.)

0.018

RDS(on)[Ω] VGS=Drive (Typ.)

0.023

Total gate charge Qg[nC]

30.0

Power Dissipation (PD)[W]

20.0

Drive Voltage[V]

4.0

Mounting Style

Surface mount

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

特点:

  • Low on-resistance.
  • Fast switching speed.
  • Drive circuits can be simple.
  • Parallel use is easy.
  • Pb-free plating ; RoHS compliant

设计资源

 

技术记事

Schematic Design & Verification

  • Temperature derating method for Safe Operating Area (SOA)
  • 开关电路的功率损失计算
  • 开关波形的监测方法
  • 功率测量中探针校正的重要性 倾斜校正篇
  • 旁路电容器的阻抗特性

Thermal Design

  • Notes for Temperature Measurement Using Thermocouples
  • 热仿真用双热阻模型
  • What is a Thermal Model? (Transistor)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • 热阻RthJC 的测量方法和使用方法
  • 使用热电偶测量封装背面温度时的注意点

设计模型

Models

  • RD3L220SN SPICE Model

Characteristics Data

  • RD3L220SN ESD Data

封装和质量数据

Package Information

  • Package Dimensions
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Environmental Data

  • About Flammability of Materials
  • About Non-use SVHC under Reach Regulation : Please contact us by filling in the form.
  • Compliance of the RoHS / ELV directive

Export Information

  • About Export Regulations