Nch 60V 120A 功率MOSFET_RJ1L12BGN

RJ1L12BGN is low on-resistance and small surface mount package MOSFET for switching application.

* 本产品是标准级的产品。本产品不建议使用于车载设备。
型号 | RJ1L12BGNTLL
Status | 推荐品
封装 | TO-263AB (LPTL)
包装数量 | 1000
最小独立包装数量 | 1000
包装形态 | Taping
RoHS | Yes

特性:

Grade

Standard

Package Code

TO-263AB

Package Size[mm]

10.1x15.1 (t=4.7)

Number of terminal

3

Polarity

Nch

Drain-Source Voltage VDSS[V]

60

Drain Current ID[A]

120.0

RDS(on)[Ω] VGS=4.5V(Typ.)

0.0027

RDS(on)[Ω] VGS=10V(Typ.)

0.0021

RDS(on)[Ω] VGS=Drive (Typ.)

0.0027

Total gate charge Qg[nC]

94.0

Power Dissipation (PD)[W]

192.0

Drive Voltage[V]

4.5

Mounting Style

Surface mount

Bare Die Part Number

Available: K4828

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

特点:

  • Low on - resistance
  • High power small mold package
  • Pb-free lead plating ; RoHS compliant
  • UIS tested
  • Halogen free