RQ3E070BN
Nch 30V 7A 中功率MOSFET

RQ3E070BN是大功率封装(HSMT8)的MOSFET,适用于开关用途。

Data Sheet 购买 *
* 本产品是标准级的产品。
本产品不建议使用于车载设备。

主要规格

 
型号 | RQ3E070BNTB1
Status | 推荐品
封装 | HSMT8
包装数量 | 3000
最小独立包装数量 | 3000
包装形态 | Taping
RoHS | Yes

特性:

Grade

Standard

Package Code

HSMT8 (3.3x3.3)

Package Size[mm]

3.3x3.3 (t=0.8)

Applications

Switching, Motor

Number of terminal

8

Polarity

Nch

Drain-Source Voltage VDSS[V]

30

Drain Current ID[A]

15.0

RDS(on)[Ω] VGS=4.5V(Typ.)

0.029

RDS(on)[Ω] VGS=10V(Typ.)

0.02

RDS(on)[Ω] VGS=Drive (Typ.)

0.029

Total gate charge Qg[nC]

4.6

Power Dissipation (PD)[W]

13.0

Drive Voltage[V]

4.5

Mounting Style

Surface mount

Bare Die Part Number

Available: K4009

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

特点:

・ Low on - resistance.
・ High Power Package (HSMT8).
・ Pb-free lead plating ; RoHS compliant
・ Halogen Free

设计资源

 

技术记事

Schematic Design & Verification

  • Temperature derating method for Safe Operating Area (SOA)
  • 开关电路的功率损失计算
  • 开关波形的监测方法
  • 功率测量中探针校正的重要性 倾斜校正篇
  • 旁路电容器的阻抗特性

Thermal Design

  • Notes for Temperature Measurement Using Thermocouples
  • 热仿真用双热阻模型
  • What is a Thermal Model? (Transistor)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • 热阻RthJC 的测量方法和使用方法
  • 使用热电偶测量封装背面温度时的注意点

设计模型

Models

  • RQ3E070BN SPICE Model
  • RQ3E070BN Thermal Model (lib)

Characteristics Data

  • ESD Data

封装和质量数据

Package Information

  • Package Dimensions
  • Inner Structure
  • Taping Information
  • Explanation for Marking
  • Condition of Soldering
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Environmental Data

  • Constitution Materials List
  • About Flammability of Materials
  • About Non-use SVHC under Reach Regulation : Please contact us by filling in the form.
  • Compliance of the RoHS / ELV directive

Export Information

  • About Export Regulations