RS1E240GN
4.5V驱动型 Nch MOSFET

场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”,为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容,可满足多样的市场需求。

Data Sheet 购买 *
* 本产品是标准级的产品。
本产品不建议使用于车载设备。

主要规格

 
型号 | RS1E240GNTB
Status | 推荐品
封装 | HSOP8 (Single)
包装数量 | 2500
最小独立包装数量 | 2500
包装形态 | Taping
RoHS | Yes

特性:

Grade

Standard

Package Code

HSOP8S (5x6)

Package Size[mm]

5.0x6.0 (t=1.0)

Applications

Power Supply

Number of terminal

8

Polarity

Nch

Drain-Source Voltage VDSS[V]

30

Drain Current ID[A]

72.0

RDS(on)[Ω] VGS=4.5V(Typ.)

0.0033

RDS(on)[Ω] VGS=10V(Typ.)

0.0026

RDS(on)[Ω] VGS=Drive (Typ.)

0.0033

Total gate charge Qg[nC]

11.2

Power Dissipation (PD)[W]

27.0

Drive Voltage[V]

4.5

Mounting Style

Surface mount

Bare Die Part Number

Available: K4506

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

特点:

  • Low on - resistance
  • High Power Package (HSOP8)
  • Pb-free lead plating; RoHS compliant
  • Halogen Free
  • 100% Rg and UIS Tested

设计资源

 

技术记事

Schematic Design & Verification

  • Temperature derating method for Safe Operating Area (SOA)
  • 开关电路的功率损失计算
  • 开关波形的监测方法
  • 功率测量中探针校正的重要性 倾斜校正篇
  • 旁路电容器的阻抗特性

Thermal Design

  • Notes for Temperature Measurement Using Thermocouples
  • 热仿真用双热阻模型
  • What is a Thermal Model? (Transistor)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • 热阻RthJC 的测量方法和使用方法
  • 使用热电偶测量封装背面温度时的注意点

设计模型

Models

  • RS1E240GN SPICE Model
  • RS1E240GN Thermal Model (lib)

Characteristics Data

  • ESD Data

封装和质量数据

Package Information

  • Package Dimensions
  • Taping Information
  • Explanation for Marking
  • Condition of Soldering
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Environmental Data

  • Constitution Materials List
  • About Flammability of Materials
  • About Non-use SVHC under Reach Regulation : Please contact us by filling in the form.
  • Compliance of the RoHS / ELV directive

Export Information

  • About Export Regulations