RSM002P03
4V Drive Pch MOSFET

电界効果晶体管的MOSFET。提供通过采用细微流程的「针对通信产品的超低阻值的设备」而产生的节能的功率MOSFET,并且结合用途,以多样的小型高功率复合型的产品线对应多种市场需求。

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* 本产品是标准级的产品。
本产品不建议使用于车载设备。

主要规格

 
型号 | RSM002P03T2L
Status | 推荐品
封装 | VMT3
包装数量 | 8000
最小独立包装数量 | 8000
包装形态 | Taping
RoHS | Yes

特性:

Grade

Standard

Package Code

SOT-723

JEITA Package

SC-105AA

Package Size[mm]

1.2x1.2 (t=0.5)

Number of terminal

3

Polarity

Pch

Drain-Source Voltage VDSS[V]

-30

Drain Current ID[A]

-0.2

RDS(on)[Ω] VGS=4V(Typ.)

1.6

RDS(on)[Ω] VGS=4.5V(Typ.)

1.4

RDS(on)[Ω] VGS=10V(Typ.)

0.9

RDS(on)[Ω] VGS=Drive (Typ.)

1.6

Power Dissipation (PD)[W]

0.15

Drive Voltage[V]

-4.0

Mounting Style

Surface mount

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

特点:

・4V驱动型 Pch 小信号MOSFET

设计资源

 

技术记事

Schematic Design & Verification

  • Temperature derating method for Safe Operating Area (SOA)
  • 开关电路的功率损失计算
  • 开关波形的监测方法
  • 功率测量中探针校正的重要性 倾斜校正篇
  • 旁路电容器的阻抗特性

Thermal Design

  • 使用瞬态热阻抗计算结温的方法
  • Notes for Temperature Measurement Using Thermocouples
  • 热仿真用双热阻模型
  • What is a Thermal Model? (Transistor)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • 热阻RthJC 的测量方法和使用方法
  • 使用热电偶测量封装背面温度时的注意点

设计模型

Models

  • RSM002P03 SPICE Model
  • RSM002P03 Thermal Model (lib)
  • How to Create Symbols for PSpice Models

2D/3D/CAD

  • VMT3 3D STEP Data

Characteristics Data

  • ESD Data

封装和质量数据

Package Information

  • Package Dimensions
  • Inner Structure
  • Taping Information
  • Explanation for Marking
  • Condition of Soldering
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Manufacturing Data

  • Reliability Test Result

Environmental Data

  • Constitution Materials List - Please contact us by filling in the form.
  • About Flammability of Materials
  • About Non-use SVHC under Reach Regulation : Please contact us by filling in the form.
  • Compliance of the RoHS / ELV directive

Export Information

  • About Export Regulations