制造中止
SCT2120AF
SiC（碳化硅）MOSFET
SCT2120AF
主要规格
特性：
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
120
Generation
2nd Gen (Planar)
Drain Current[A]
29
Total Power Dissipation[W]
165
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.33x14.94 (t=4.65)
特点：
・ Low on-resistance・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant
