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SCT3060ALHR
N-channel SiC（碳化硅）功率MOSFET
SCT3060ALHR
SCT3060ALHR
N-channel SiC（碳化硅）功率MOSFET
沟槽栅极结构的SiC-MOSFET。平面型SiC-MOSFET相比，同一芯片尺寸的导通电阻可降低50%，这将大幅降低太阳能发电用功率调节器和工业设备用电源、工业用逆变器等所有相关设备的功率损耗。
主要规格
特性：
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
60
Generation
3rd Gen (Trench)
Drain Current[A]
39
Total Power Dissipation[W]
165
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
Common Standard
AEC-Q101 (Automotive Grade)
特点：
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
- Qualified to AEC-Q101
