SiC（碳化硅）功率模块_BSM300D12P3E005
BSM300D12P3E005是一款半桥型SiC功率模块，由罗姆制造的SiC-UMOSFET和SiC-SBD（肖特基势垒二极管）组成。适用于电机驱动、逆变器、转换器应用。
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特性：
Drain-source Voltage[V]
1200
Drain Current[A]
300.0
Total Power Dissipation[W]
1260
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
特点：
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.