SiC（碳化硅）功率模块_BSM600D12P3G001
BSM600D12P3G001是由罗姆公司生产的SiC-UMOSFET和SiC-SBD构成的全SiC半桥模块。适合电机驱动、逆变器、转换器、太阳能发电、风力发电及感应加热装置等用途。
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特性：
Drain-source Voltage[V]
1200
Drain Current[A]
576.0
Total Power Dissipation[W]
2450
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
特点：
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.