SCS306AM
SiC（碳化硅）肖特基势垒二极管
SCS306AM
SCS306AM
SiC（碳化硅）肖特基势垒二极管
可降低开关损耗，可高速开关。
主要规格
特性：
Grade
Standard
Reverse Voltage[V]
650
Continuous Forward Current[A]
6
Generation
3rd Gen
Total Power Dissipation[W]
30
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.16x15.87 (t=4.9)
特点：
- Shorter recovery time
- Reduced temperature dependence
- High-speed switching possible
- High surge current capability
