BM63564S-VA
低速开关用搭载600V IGBT的智能功率元器件(IPM)

是将栅极驱动器、阴极负载二极管、IGBT、再生用快速恢复二极管一体化封装的智能电源模块(IPM)。面向诸如压缩机驱动等低速开关用途(~6kHz) ,采用降低了导通损耗的低饱和电压IGBT。以高速开关驱动时,请考虑使用面向高速开关用途的系列产品。

Data Sheet 购买 *
* 本产品是标准级的产品。
本产品不建议使用于车载设备。

主要规格

 
型号 | BM63564S-VA
Status | 推荐品
封装 | HSDIP25
包装数量 | 60
最小独立包装数量 | 12
包装形态 | Tube
RoHS | Yes

特性:

Power Device

IGBT

VCES [V]

600

IC [A]

15

Vce(sat) [V]

1.5

Reccomended Switching Frequency [kHz]

~6

Isolation Voltage [Vrms]

1500

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

特点:

  • 3phase DC/AC Inverter
  • 600V/15A
  • Low Side IGBT Open Emitter
  • Built -in Bootstrap Diode
  • High Side IGBT Gate Driver(HVIC): SOI (Silicon On Insulator) Process, Drive Circuit, High Voltage Level Shifting, Current Limit for Bootstrap Diode, Control Supply Under-Voltage Locked Out (UVLO)
  • Low Side IGBT Gate Driver(LVIC): Drive Circuit, Short Circuit Current Protection (SCP), Control Supply Under Voltage Locked Out (UVLO), Temperature Output by Analog Signal (VOT)
  • Fault Signal(LVIC): Corresponding to SCP (Low Side IGBT), UVLO Fault
  • Input Interface 3.3V, 5V Line
  • UL Recognized: File E468261

设计资源

 

技术记事

Schematic Design & Verification

  • 开关波形的监测方法

Thermal Design

  • Notes for Temperature Measurement Using Thermocouples
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction

封装和质量数据

Package Information

  • Package Information
  • Anti-Whisker formation

Manufacturing Data

  • Reliability Test Result

Environmental Data

  • Constitution Materials List
  • About Flammability of Materials
  • Compliance of the ELV directive
  • About Non-use SVHC under Reach Regulation : Please contact us by filling in the form.

Export Information

  • About Export Administration Regulations (EAR)