SCT2H12NZ
SiC（碳化硅）MOSFET
SCT2H12NZ
SCT2H12NZ
SiC（碳化硅）MOSFET
SCT2H12NZ是1700V 3.7A的Nch SiC功率MOSFET。
主要规格
特性：
Drain-source Voltage[V]
1700
Drain-source On-state Resistance(Typ.)[mΩ]
1150
Generation
2nd Gen (Planar)
Drain Current[A]
3.7
Total Power Dissipation[W]
35
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
特点：
- Low on-resistance
- Fast switching speed
- Long creepage distance
- Simple to drive
- Pb-free lead plating; RoHS compliant
Reference Design / Application Evaluation Kit
-
- Evaluation Board - BD7682FJ-LB-EVK-402
Isolation Fly-back Converter Quasi-Resonant Method Output 24 W 24 V
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- Evaluation Board - BD7682FJ-LB-EVK-302
The BD7682FJ is an AC/DC quasi-resonant flyback controller IC from ROHM Semiconductor and offers an Auxiliary Power Supply Solution if combined with the 1700 V SiC MOSFET (SCT2H12NZ). The BD7682FJ and SCT2H12NZ combined together have been used to develop an isolated 100 W 24 V output auxiliary power solution with a very accurate voltage regulation.
