SCT4018KR (新产品)
1200V, 18mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET

SCT4018KR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.

Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Data Sheet 购买
* 本产品是标准级的产品。
本产品不建议使用于车载设备。

主要规格

 
型号 | SCT4018KRC15
Status | 推荐品
封装 | TO-247-4L
包装数量 | 450
最小独立包装数量 | 30
包装形态 | Taping
RoHS | Yes

特性:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

18

Generation

4th Gen (Trench)

Drain Current[A]

81

Total Power Dissipation[W]

312

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x23.45 (t=5.2)

Find Similar

特点:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant

Evaluation
Board

 
    • Evaluation Board
    • P05SCT4018KR-EVK-001
      • This board is designed with the optimum gate drive circuit for "SCT4018KR", surely TO-247-4L can also be evaluated
      • Single power supply(+12V operation)
      • Supports double pulse testing up to 150A and switching up to 500kHz
      • Supports various power supply topologies(Buck, Boost, Half-Bridge)
      • Built-in adjustable gate drive isolated power supply(positive and negative)(+12V to +25V, -4.5V to -2V)
      • Active mirror clamp circuit(driver IC built-in type)
      • Gate surge clamp circuit

  • User's Guide Buy