3-Level Flying Capacitor Booster
In this topology, the additional voltage levels are synthesized by a capacitor, the so-called flying-capacitor.
The voltage of the flying capacitor is half of the output voltage. The capacitor can offset the output voltage with VOUT/2 in a positive and negative direction.
As the operation is three-leveled, the voltage stress on the MOSFET or Diode is decreased. This results in lower EMI, lower current, and lower voltage ripple.
- 3-level topology reduce stress on semiconductor devices
- Various choises of Boost Switch depend on system requirements
- Lower loss SiC MOSFET, IGBT
- Smaller Package choises from 3-leads, 4-leads or 7-leads,
- SiC Shott Key Diode provide lower loss
|Product Category||Product Family||Product Number||Feature|
|Boost Switch||650V IGBT||RGWxxTx65 series||Trench-gate and thin-wafer technologies are utilized to achieve low VCE(sat) reducing switching loss.|
|750V SiC MOSFET||SCT4xxxDx series||The latest SiC MOSFET device. Enhanced low on-resistance enable best in class performance. It supports 750 V withstand voltage, ensuring a higher operating margin than conventional products, and can be used safely.|
|650V SiC MOSFET||SCT3xxxAx series||Trench-gate SiC MOSFET with low on-resistance (50% reduction) compared to conventional products.|
|Boost Diode||650V SiC SBD||SCS3xxAx series||High IFSM in spite of low VF, low leakage current provides safety design.|
|Gate Driver||Galvanic Isolated gate driver||BM61x4xRFV||1ch configuration, 3,750Vrms isolated type Gate Driver, can be used for switching devices with current source pins.|